This webinar will explain how to achieve high efficiency in energy conversion of alternating current (AC) and direct current (DC) utilizing next generation field-effect transistors (FETs) made of gallium nitride (GaN). These devices offer lower losses, higher switching speeds, and smaller sizes than conventional silicon-based FETs.
The presentation will also demonstrate the benefits of using isolated GaN FET drivers, which provide reliable and robust isolation, protection, and control for the GaN FETs. The presentation will show how this system can improve the performance, efficiency, and reliability of clean energy systems.
Learn More:
https://www.allegromicro.com/en/applications/energy
